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| SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4113, REV A SPM6G150-060D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE ELECTRICAL CHARACTERISTICS PER IGBT DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MI N TYP MAX UNIT PARAMETER IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage IC = 250 A, VGE = 0V Continuous Collector Current Pulsed Collector Current, 1mS Gate to Emitter Voltage Gate-Emitter Leakage Current , VGE = +/-20V Zero Gate Voltage Collector Current VCE = 600 V, VGE=0V Ti=25oC VCE = 480 V, VGE=0V Ti=125oC Collector to Emitter Saturation Voltage, IC = 100A, VGE = 15V, Maximum Thermal Resistance RJC 0.25 o BVCES TC = 25 OC TC = 90 C ICM VGE IGES ICES O 600 - - V IC - - 150 130 A - - 250 +/-20 +/- 100 A V nA 3 20 TC = 25 C O mA mA V VCE(SAT) - 1.7 2.0 C/W Brake IGBT SPECIFICATIONS Continuous Collector Current Pulsed Collector Current, 0.5mS Maximum Thermal Resistance TC = 25 OC TC = 90 C ICM RJC O IC - - 80 60 120 0.45 o A A C/W Over-Temperature Shutdown Over-Temperature Shutdown Over-Temperature Shutdown Hysteresis Over-Temperature Output Tco Tsd 100 110 20 10 120 o C C o 10mV/oC * 221 West Industry Court 3 Deer Park, NY 11729 3 (631) 586 7600 FAX (631) 242 9798 * * World Wide Web Site - http://www.sensitron.com * E-mail Address - sales@sensitron.com * SPM6G150-060D SENSITRON TECHNICAL DATA DATASHEET 4113, REV A PARAMETER SYMBOL MI N TYP MAX UNIT ULTRAFAST DIODES RATING AND CHARACTERISTICS Diode Peak Inverse Voltage Continuous Forward Current, TC = 90 C Forward Surge Current, tp = 10 msec Diode Forward Voltage, IF = 100A O PIV IF IFSM VF trr RJC 600 - 1.4 90 130 500 1.7 160 V A A V nsec o Diode Reverse Recovery Time (IF=100A, VRR=300V , di/dt=200 A/s) Maximum Thermal Resistance - - 0.4 C/W Gate Driver Supply Voltage Input On Current Opto-Isolator Logic High Input Threshold Input Reverse Breakdown Voltage Input Forward Voltage @ Iin = 5mA Under Voltage Lockout ITRIP Refernce Voltage (1) VCC HIN, LIN Ith BVin VF VCCUV Itrip-ref (2) 10 2 5.0 7.0 1.45 3 - 15 20 5.0 V mA mA V V V V sec nsec 1.6 1.5 1.5 5 1.7 9.7 1.55 TBD 800 180 1000 160 Desaturation Over-Current Protection Blanking time Input-to-Output Turn On Delay Output Turn On Rise Time Input-to-Output Turn Off Delay Output Turn Off Fall Time At VCC=300V, IC=50A, TC = 25 Input-Output Isolation Voltage tbl tond tr toffd tf - 1000 - - V Maximum operating Junction Temperature Maximum Storage Junction Temperature Tjmax Tjmax -40 -55 - 150 150 o C C o (1) ITRIP Cycle-by cycle current limit is internally set to 70A peak. The set point can be lowered by connecting a resistor between Itrip-ref and Gnd. The set point can be increased by connecting a resistor between Itrip-ref and +5V ref (2) Desaturation blanking maximum time is TBD and is only provided at the low-side IGBTs. * 221 West Industry Court 3 Deer Park, NY 11729 3 (631) 586 7600 FAX (631) 242 9798 * * World Wide Web Site - http://www.sensitron.com * E-mail Address - sales@sensitron.com * SPM6G150-060D SENSITRON TECHNICAL DATA DATASHEET 4113, REV A Package Drawing: * 221 West Industry Court 3 Deer Park, NY 11729 3 (631) 586 7600 FAX (631) 242 9798 * * World Wide Web Site - http://www.sensitron.com * E-mail Address - sales@sensitron.com * SENSITRON SEMICONDUCTOR TECHNICAL DATA DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement. 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. * 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 * * World Wide Web - http://www.sensitron.com * E-Mail Address - sales@sensitron.com * |
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